Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Front-End

ABSTRACT

Artificial synaptic devices with a HfO 2 -based ferroelectric layer that can be implemented in the CMOS front-end are provided. In one aspect, a method of forming a FET device is provided. The method includes: forming a shallow STI region in a substrate separating a first active area of the substrate from a second active area of the substrate; forming at least one FeFET on the substrate in the first active area having a ferroelectric material including a HfO 2 -based material; and forming at least one logic FET alongside the at least one FeFET on the substrate in the second active area, wherein the at least one logic FET has a gate dielectric including the HfO 2 -based material. A FET device formed by the present techniques is also provided.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional of U.S. application Ser. No. 15/797,774filed on Oct. 30, 2017, the disclosure of which is incorporated byreference herein.

FIELD OF THE INVENTION

The present invention relates to artificial synaptic devices, and moreparticularly, to artificial synaptic devices with a hafnium oxide(HfO₂)-based ferroelectric layer that can be implemented in thecomplementary metal-oxide-semiconductor (CMOS) front-end.

BACKGROUND OF THE INVENTION

The realization of a synaptic element is of interest for hardwareimplementation of deep learning networks. Weights are modified andstored by modulating the conductivity of non-volatile memory arrayelements. Use of the adjustable channel conductance of ferroelectric(FE) field-effect transistors (FETs) FE-FETs as a synaptic weight dateback to the early 1990s. See, for example, H. Ishiwara, “Proposal ofAdaptive-Learning Neuron Circuits with Ferroelectric Analog-MemoryWeights,” Jpn. J. Appl. Phys. 32, 442-446 (January 1993).

Significant progress has been made using perovskite ferroelectrics suchas Pb(Zr,Ti)O₃ in the silicon complementary metal-oxide-semiconductor(CMOS) back-end. See, for example, Kaneko et al., “FerroelectricArtificial Synapses for Recognition of a Multishaded Image,” IEEETransactions on Electron Devices, vol. 61, Issue 8 (August 2014).However, implementation remains challenging due to incompatibilities ofperovskite ferroelectrics with CMOS processing, e.g., due to the needfor thick films and hydrogen barriers, thermal budgets that areincompatible with the CMOS front-end (for example a gate-first thermalbudget can exceed temperatures at which many perovskite ferroelectricsare thermally stable), and contamination risks posed by lead-containingperovskites.

Thus, improved techniques for implementing ferroelectric artificialsynaptic devices in the CMOS front-end would be desirable.

SUMMARY OF THE INVENTION

The present invention provides artificial synaptic devices with ahafnium oxide (HfO₂)-based ferroelectric layer that can be implementedin the complementary metal-oxide-semiconductor (CMOS) front-end. In oneaspect of the invention, a method of forming a field-effect transistor(FET) device is provided. The method includes: forming a shallow trenchisolation (STI) region in a substrate separating a first active area ofthe substrate from a second active area of the substrate; forming atleast one ferroelectric FET (FeFET) on the substrate in the first activearea having a ferroelectric material including a hafnium oxide(HfO₂)-based material; and forming at least one logic FET alongside theat least one FeFET on the substrate in the second active area, whereinthe at least one logic FET has a gate dielectric including theHfO₂-based material.

In another aspect of the invention, another method of forming a FETdevice is provided. The method includes: forming a STI region in asubstrate separating a first active area of the substrate from a secondactive area of the substrate; forming at least one FeFET on thesubstrate in the first active area having a ferroelectric materialincluding a first HfO₂-based material; and forming at least one logicFET alongside the at least one FeFET on the substrate in the secondactive area, wherein the at least one logic FET has a gate dielectricincluding a second HfO₂-based material.

In yet another aspect of the invention, a FET device is provided. TheFET device includes: a substrate having a first active area separatedfrom a second active area by a STI region; at least one FeFET on thesubstrate in the first active area having a ferroelectric materialincluding a HfO₂-based material; and at least one logic FET alongsidethe at least one FeFET on the substrate in the second active area,wherein the at least one logic FET has a gate dielectric including theHfO₂-based material.

A more complete understanding of the present invention, as well asfurther features and advantages of the present invention, will beobtained by reference to the following detailed description anddrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram illustrating a field-effect transistor (FET) deviceincluding a ferroelectric FET (FeFET) and a logic FET having beenco-fabricated alongside one another on a common substrate according toan embodiment of the present invention;

FIG. 2 is a diagram illustrating a starting structure for forming theFET device of FIG. 1 including a substrate and a shallow trenchisolation (STI) region defining at least two active areas (e.g., Activearea I and Active area II) in the substrate according to an embodimentof the present invention;

FIG. 3 is a diagram illustrating a hafnium oxide (HfO₂)-based materialhaving been deposited onto the substrate in both the FeFET (Active areaI) and the logic FET (Active area II) regions according to an embodimentof the present invention;

FIG. 4 is a diagram illustrating an optional dielectric capping layerhaving been deposited onto the HfO₂-based material in both the FeFET(Active area I) and the logic FET (Active area II) regions according toan embodiment of the present invention;

FIG. 5 is a diagram illustrating a metal layer having been depositedonto the (optional) dielectric capping layer in both the FeFET (Activearea I) and the logic FET (Active area II) regions according to anembodiment of the present invention;

FIG. 6 is a diagram illustrating a patterned hardmask having been formedon the metal layer marking the footprint and location of the at leastone FeFET in the Active area I according to an embodiment of the presentinvention;

FIG. 7 is a diagram illustrating an etch with the hardmask having beenused to pattern the stack of materials into the at least one individualFeFET in the Active area I having a ferroelectric material (formed fromthe HfO₂-based material) disposed on the substrate, an (optional)dielectric capping layer (formed from dielectric capping layer) disposedon the ferroelectric material, and an electrode (formed from metallayer) disposed on the dielectric capping layer according to anembodiment of the present invention;

FIG. 8 is a diagram illustrating the hardmask having been removed and ablock mask having been formed covering the (patterned) FeFET in theActive area I according to an embodiment of the present invention;

FIG. 9 is a diagram illustrating a capping layer having been depositedonto the metal layer, and a second metal layer having been depositedonto the capping layer according to an embodiment of the presentinvention;

FIG. 10 is a diagram illustrating another patterned hardmask having beenformed on the second metal layer marking the footprint and location ofthe at least one logic FET in the Active area II according to anembodiment of the present invention;

FIG. 11 is a diagram illustrating an etch with the hardmask having beenused to pattern the stack into the at least one individual logic FET inthe Active area II having a gate dielectric (formed from the HfO₂-basedmaterial) disposed on the substrate, an (optional) dielectric cappinglayer (formed from the dielectric capping layer) disposed on the gatedielectric, a gate metal layer (formed from the metal layer) disposed onthe dielectric capping layer, an (optional) gate capping layer (formedfrom the capping layer) disposed on the gate metal layer and an(optional) second gate metal layer (formed from the second metal layer)disposed on the gate capping layer according to an embodiment of thepresent invention;

FIG. 12 is a diagram illustrating the remaining hardmask and the blockmask having been removed and an anneal having been performed tocrystallize the ferroelectric material in the FeFET, to set thresholdvoltage in the logic FET and to activate dopants according to anembodiment of the present invention;

FIG. 13 is a diagram illustrating a starting structure for forming a FETdevice according to an alternative embodiment of the present techniquesincluding a substrate and a STI region defining at least two activeareas (e.g., Active area I and Active area II) in the substrate, a firstblock mask having been formed covering the logic FET (Active area II)and a (first) HfO₂-based material having been deposited onto thesubstrate in the FeFET (Active area I) according to an embodiment of thepresent invention;

FIG. 14 is a diagram illustrating the first block mask having beenremoved, a second block mask having been formed covering the FeFET(Active area I) and a (second) HfO₂-based material having been depositedonto the substrate in the logic FET (Active area II) according to anembodiment of the present invention;

FIG. 15 is a diagram illustrating the second block mask having beenremoved, an optional dielectric capping layer having been deposited ontothe first/second HfO₂-based materials in the FeFET (Active area I)/logicFET (Active area II) regions, and a metal layer having been depositedonto the (optional) dielectric capping layer in both the FeFET (Activearea I) and the logic FET (Active area II) regions according to anembodiment of the present invention;

FIG. 16 is a diagram illustrating a patterned hardmask having beenformed on the metal layer marking the footprint and location of the atleast one FeFET in the Active area I, and an etch with the hardmaskhaving been used to pattern the stack of materials into the at least oneindividual FeFET in the Active area I having a ferroelectric material(formed from the first HfO₂-based material) disposed on the substrate,an (optional) dielectric capping layer (formed from dielectric cappinglayer) disposed on the ferroelectric material, and an electrode (formedfrom metal layer) disposed on the dielectric capping layer according toan embodiment of the present invention;

FIG. 17 is a diagram illustrating the hardmask having been removed, ablock mask having been formed covering the (patterned) FeFET in theActive area I, a capping layer having been deposited onto the metallayer, and a second metal layer having been deposited onto the cappinglayer, and another patterned hardmask having been formed on the secondmetal layer marking the footprint and location of the at least one logicFET in the Active area II according to an embodiment of the presentinvention;

FIG. 18 is a diagram illustrating an etch with the hardmask having beenused to pattern the stack into the at least one individual logic FET inthe Active area II having a gate dielectric (formed from the secondHfO₂-based material) disposed on the substrate, an (optional) dielectriccapping layer (formed from the dielectric capping layer) disposed on thegate dielectric, a gate metal layer (formed from the metal layer)disposed on the dielectric capping layer, an (optional) gate cappinglayer (formed from the capping layer) disposed on the gate metal layerand an (optional) second gate metal layer (formed from the second metallayer) disposed on the gate capping layer according to an embodiment ofthe present invention; and

FIG. 19 is a diagram illustrating the remaining hardmask and the blockmask having been removed and an anneal having been performed tocrystallize the ferroelectric material in the FeFET, to set thresholdvoltage in the logic FET and to activate dopants according to anembodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Provided herein are ferroelectric artificial synapse devices that can beimplemented in the complementary metal-oxide-semiconductor (CMOS)front-end along with, e.g., non-synaptic devices such as logic fieldeffect transistors (FETs). As will be described in detail below,according to an exemplary embodiment the present artificial synapsedevices are configured as ferroelectric FETs (FeFETs) that areco-fabricated with logic FETs in the CMOS front-end-of-line (FEOL).Advantageously, both the FeFET and logic FETs can leverage hafnium oxide(HfO₂)-based dielectrics which can be tuned to provide thermal stabilityin the ferroelectric phase compatible with the high thermal budget inCMOS FEOL (TFEOL).

For instance, activation and/or other anneals performed in logic FETprocess flows can exceed 1000° C. If being co-fabricated with a logicFET, the ferroelectric material used in the FeFET must be thermallystable at these elevated temperatures. By “thermally stable” it meansthat the ferroelectric material of the FeFET remains crystallized in theferroelectric phase. Namely, a ferroelectric material is a material thatexhibits electrically switchable spontaneous polarization. See, forexample, Chernikova et al., “Ultrathin Hf_(0.5)Zr_(0.5)O₂ FerroelectricFilms on Si,” ACS Appl. Mater. Interfaces 2016, 8, pgs. 7232-7237 (March2016) (hereinafter “Chernikova”), the contents of which are incorporatedby reference as if fully set forth herein. After deposition, an annealmay be needed to crystallize the ferroelectric material in theferroelectric phase. The ferroelectric phase is necessary for properoperation of the FeFET.

According to an exemplary embodiment, HfO₂-based materials are employedas the ferroelectric material in the FeFETs and as the dielectric in thelogic FETs (wherein the FeFETs and the logic FETs are co-fabricated in acommon process flow). Suitable HfO₂-based materials include, but are notlimited to, pure HfO₂, hafnium zirconate (Hf_(˜0.5)Zr_(˜0.5)O₂), and/orHfO₂ doped with small quantities of nitrogen (N), carbon (C), silicon(Si), aluminum (Al), lanthanum (La), gadolinium (Gd), yttrium (Y),scandium (Sc), and/or strontium (Sr). By way of example only, forX-doped HfO₂ where X is a metal (i.e., Al, La, Gd, Sc and/or Sr) or Si,an ion percentage [X]/([Hf]+[X]) of less than about 10%, e.g., fromabout 2% to about 6% and ranges therebetween is considered a smalldopant quantity. Similarly, when X is N or C, an ion percentage[X]/([O]+[X]) of less than about 10%, e.g., from about 2% to about 6%and ranges therebetween is considered a small dopant quantity.

Advantageously, dopants such as Si, Al and La raise the HfO₂crystallization temperature (i.e., as compared to pure HfO₂), therebyincreasing the thermal stability at the TFEOL. See, for example, J.Müller, “Ferroelektrizität in Hafniumdioxid and deren Anwendung innicht-flüchtigen Halbleiterspeichern,” (English translation:“Ferroelectricity in hafnium dioxide and its application in non-volatilesemiconductor memories”), Ph.D. Thesis Dissertation, TechnicalUniversity of Dresden (2014) (hereinafter “Müller”) (See FIG. 3.16), andS. V. Ushakov et al., “Effect of La and Y on crystallization temperatureof hafnia and zirconia,” J. Mater. Res., vol. 19, no. 3, pgs. 693-696(March 2004), the contents of both of which are incorporated byreference as if fully set forth herein. The English translation of termsappearing in FIG. 3.16 of Müller are as follows: Schicktdicke=layerthickness; aus Literature=from literature; Eingrenzung fur=range for;elektr. Daten=electrical data;Kristallisationstemperature=crystallization temperature; TransistorProzessierung=transistor processing; TiN-Elektrode=TiN electrode;ALD-Prozess=ALD process; Dotierung=doping; and the figure caption: FIG.3.16: Summary of all crystallization temperatures determined in thiswork for HfO₂, ZrO₂, HfO₂—ZrO₂ and Si/Y/Al:HfO₂ as a function of thelayer thickness and their comparison to references 1 [235], 2 [236] and3 [237] available in the literature.” Pure HfO₂ for instance maycrystallize into a paraelectric or ferroelectric phase at a temperatureof from about 400° C. to about 600° C., and ranges therebetween. See,for example, T. Nishimura et al., “Ferroelectricity of nondoped thinHfO₂ films in TiN/HfO₂/TiN stacks,” Japanese Journal of Applied Physics55, 08PB01 (June 2016) (4 total pages), the contents of which areincorporated by reference as if fully set forth herein. By way ofexample only, the TFEOL is from about 800° C. to about 1200° C., andranges therebetween, e.g., from about 1000° C. to about 1200° C., andranges therebetween.

By way of example only, FIG. 1 illustrates an exemplary embodimentwhereby an FeFET 102 and a logic FET 104 have been co-fabricatedalongside one another on a common substrate 106 in accordance with thepresent techniques. It is noted that while the figures depict a singleFeFET 102 on the substrate 106 alongside a single logic FET 104, this isbeing done merely for ease and clarity of depiction and it is to beunderstood that multiple FET devices of either type (i.e., FeFET orlogic FET) can be fabricated in the same manner described.Co-fabricating FeFET and logic FET devices on the same substrate can beused to produce circuits having both logic blocks and FeFET blocks fordata processing.

Substrate 106 is (n-type or p-type) doped and, as shown in FIG. 1, hasat least two active regions (see also FIG. 2—described below), oneactive region containing at least one FeFET 102 and the other activeregion containing at least one logic FET 104, separated by a shallowtrench isolation (STI) region 108. STI region 108 is formed by firstpatterning a trench in the substrate (i.e., substrate 106) and thenfilling the trench with an insulator (also referred to herein generallyas an STI insulator) to form the STI region 108. Suitable STI insulatorsinclude, but are not limited to, oxides such as silicon dioxide (SiO₂).

FeFET 102 includes a ferroelectric material 120 disposed on thesubstrate 106, an optional dielectric capping layer 122 disposed on theferroelectric material 120, and an electrode 124 disposed on thedielectric capping layer 122 (or directly on the ferroelectric material120 if the dielectric capping layer 122 is not used). As provided above,suitable ferroelectric materials 120 include, but are not limited to,HfO₂-based materials such as pure HfO₂, Hf_(˜0.5)Zr_(˜0.5)O₂, and/orHfO₂ doped with small quantities of N, C, Si, Al, La, Gd, Y, Sc, and/orSr.

Suitable materials for the (optional) dielectric capping layer 122include, but are not limited to, lanthanum oxide (La₂O₃) and/or aluminumoxide (Al₂O₃). Dielectric capping layer 122 can be employed, forexample, to release metal ions (e.g., La, Al, etc.) to the underlyingferroelectric material 120 during high temperature processing, whichwhen the metal ions reach the substrate 106 can be employed to generateelectrical dipoles that tune the range of accessible FeFET thresholdvoltages (Vt). Suitable materials for use in electrode 124 include, butare not limited to, metals such as titanium nitride (TiN) and/ortantalum nitride (TaN).

As will be described in detail below, according to an exemplaryembodiment where steps for fabricating the FeFET and the logic FET areperformed concurrently, one or more of the ferroelectric material 120,the dielectric capping layer 122, and the electrode 124 can be formedfrom layers common to both the FeFET and the logic FET. In that case,for instance, the ferroelectric material 120, the dielectric cappinglayer 122, and the electrode 124 would have the same composition as thegate dielectric 130, the dielectric capping layer 132, and the gatemetal layer 134, respectively.

Specifically, logic FET 104 includes a gate dielectric 130 disposed onthe substrate 106, an optional dielectric capping layer 132 disposed onthe gate dielectric 130, a gate metal layer 134 disposed on thedielectric capping layer 132 (or directly on the gate dielectric 130 ifthe dielectric capping layer 132 is not used), an optional gate cappinglayer 136 disposed on the gate metal layer 134 and optionaladditional/second gate metal layer 138 disposed on the gate cappinglayer 136. According to an exemplary embodiment, as provided above, thegate dielectric 130, the dielectric capping layer 132, and the gatemetal layer 134, are co-fabricated with the FeFET and thus have the samecomposition as the ferroelectric material 120, the dielectric cappinglayer 122, and the electrode 124, respectively. Thus, gate dielectric130 can include a HfO₂-based material such as pure HfO₂,Hf_(˜0.5)Zr_(˜0.5)O₂, and/or HfO₂ doped with small quantities of N, C,Si, Al, La, Gd, Y, Sc, and/or Sr. As above, suitable materials for thedielectric capping layer 132 include, but are not limited to, La₂O₃and/or aluminum Al₂O₃. Suitable metals for use in metal layer 134include, but are not limited to, TiN and/or TaN.

The optional/additional gate capping layer 136 and optional second gatemetal layer 138 can be used to tune the threshold voltage (Vt) of thelogic FET. See, for example, U.S. Patent Application Publication Number2009/0152636 by Chudzik et al., entitled “High-K/Metal Gate Stack UsingCapping Layer Methods, IC and Related Transistors,” the contents ofwhich are incorporated by reference as if fully set forth herein.Suitable materials for gate capping layer 136 include, but are notlimited to, La₂O₃ and/or aluminum oxide Al₂O₃. Being optional, when thegate capping layer 136 is not present, there may be no need for thesecond gate metal layer 138. However, the workfunction of a metal gatecan be tuned by combining multiple layers of differentworkfunction-setting metals. Thus, according to an exemplary embodiment,the (first) gate metal layer 134 might contain TiN while the second gatemetal layer 138 contains TaN, or vice versa.

Given the above overview of the present techniques, an exemplarymethodology for forming (synaptic) FeFETs in the CMOS front-end is nowdescribed by way of reference to FIGS. 2-12. In order to illustrate thecompatibility of the present techniques with front-end CMOS circuitry,the example given in this process flow will involve co-fabricating atleast one FeFET 102 along with at least one logic FET 104 on the samesubstrate 106. While the formation of a single FeFET 102 on thesubstrate alongside a single logic FET 104 will be described, this isbeing done merely for ease and clarity of depiction and the same processcan be employed in the same manner described to fabricate multiple FETdevices of either type (i.e., FeFET or logic FET). It is noted that likestructures with those in FIG. 1 are numbered alike in the followingdescription of the fabrication process.

As shown in FIG. 2, the process begins with substrate 106. Suitablesubstrates 106 include, but are not limited to, a bulk semiconductor,e.g., silicon (Si), germanium (Ge), and/or silicon germanium (SiGe)wafer, and a semiconductor-on-insulator (SOI) wafer. An SOI waferincludes an SOI layer separated from a substrate by a buried insulator.When the insulator is an oxide, it is often referred to as a buriedoxide or BOX. Substrate 106 is doped with an n-type or p-type dopant.Suitable n-type dopants include, but are not limited to, phosphorous (P)and/or arsenic (As). Suitable p-type dopants include, but are notlimited to, boron (B).

STI region 108 is used to define at least two active areas (e.g., Activearea I and Active area II) in the substrate 106. For illustrativepurposes only, in the present example FeFET 102 will be formed in theActive area I and logic FET 104 will be formed in the Active area II.

Further, as highlighted above, one or more of the steps used to formFeFET 102 and logic FET 104 are preferably performed concurrently. Inthat case, the corresponding structures will have the same compositionin both the (Fe and logic) FETs.

For instance, as shown in FIG. 3 a HfO₂-based material 302 is depositedonto the substrate 106 in both the FeFET (Active area I) and the logicFET (Active area II) regions. HfO₂-based material 302 can be depositedusing a process such as atomic layer deposition (ALD) or sputtering. Asis now apparent from the preceding description, the HfO₂-based material302 will serve as the basis for forming the ferroelectric material 120of the FeFET 102 and the gate dielectric 130 of the logic FET 104. Asprovided above, suitable HfO₂-based materials include, but are notlimited to, pure HfO₂, Hf_(˜0.5)Zr_(˜0.5)O₂, and/or HfO₂ doped withsmall quantities of N, C, Si, Al, La, Gd, Y, Sc, and/or Sr.

The same applies to the dielectric capping layer 402 that is nextoptionally deposited onto the HfO₂-based material 302 in both the FeFET(Active area I) and the logic FET (Active area II) regions. See FIG. 4.This dielectric capping layer 402 will serve as the basis for formingthe dielectric capping layer 122 of the FeFET and the dielectric cappinglayer 132 of the logic FET. As provided above, suitable materials forthe dielectric capping layer 402 include, but are not limited to, La₂O₃and/or Al₂O₃. The dielectric capping layer 402 can be deposited using aprocess such as ALD or chemical vapor deposition (CVD).

As shown in FIG. 5, a metal layer 502 is deposited onto the dielectriccapping layer 402 (or directly onto the HfO₂-based material 302 if thedielectric capping layer 402 is not present) in both the FeFET (Activearea I) and the logic FET (Active area II) regions. This metal layer 502will serve as the basis for forming the electrode 124 of the FeFET 102and the gate metal layer 134 of the logic FET 104. As provided above,suitable electrode/gate metals include, but are not limited to, TiNand/or TaN. The metal layer 502 can be deposited using a process such asevaporation or electrochemical plating.

This completes the stack (i.e., HfO₂-based material 302/dielectriccapping layer 402/metal layer 502) used to form the FeFET 102. Accordingto an exemplary embodiment, the stack is next patterned into at leastone individual FeFET 102. For instance, as shown in FIG. 6 a patternedhardmask 602 is formed on the metal layer 502 marking the footprint andlocation of the at least one FeFET 102 in the Active area I. Suitablehardmask materials include, but are not limited to, nitride hardmaskmaterials such as silicon nitride (SiN).

An etch with the hardmask 602 is then used to pattern the stack into theat least one individual FeFET 102 in the Active area I havingferroelectric material 120 (formed from HfO₂-based material 302)disposed on the substrate 106, (optional) dielectric capping layer 122(formed from dielectric capping layer 402) disposed on the ferroelectricmaterial 120, and electrode 124 (formed from metal layer 502) disposedon the dielectric capping layer 122. See FIG. 7. An anisotropic etchingprocess such as reactive ion etching (RIE) can be employed to etch thestack. Portions of the HfO₂-based material 302 a/dielectric cappinglayer 402 a/metal layer 502 a remain in the stack in the Active area II.See FIG. 7.

As described above, the placement of the gate capping layer 136 and thesecond gate metal layer 138 in the logic FET is optional. Thus,according to an alternative embodiment where these optional layers arenot employed, the logic FET stack is also considered complete at thisstage in the process, and both FET devices (FeFET and logic FET) arepatterned concurrently.

However, to enable further processing of the logic FET vis-à-vis theFeFET, following patterning of the FeFET 102 the hardmask 602 is removedand a block mask 802 is formed covering the (patterned) FeFET 102 in theActive area I. See FIG. 8. Suitable materials for block mask 802include, but are not limited to, oxide masking materials such as SiO₂and nitride masking materials such as SiN.

As shown in FIG. 9, a second/additional dielectric capping layer 902 isdeposited onto the metal layer 502, and a second/additional metal layer904 (wherein metal layer 502 may, in this case, also be referred toherein as a first metal layer) is deposited onto the capping layer 902.Further, in order to distinguish dielectric capping layer 902 fromdielectric capping layer 402, dielectric capping layer 402 may also bereferred to herein as a first dielectric capping layer. As above,suitable materials for (second) capping layer 902 include, but are notlimited to, La₂O₃and/or aluminum Al₂O₃. Suitable metals for use insecond metal layer 904 include, but are not limited to, TiN and/or TaN.The (second) capping layer 902 can be deposited using a process such asALD or CVD, and the second metal layer 904 can be deposited using aprocess such as evaporation or electrochemical plating.

In the present example, this completes the stack (i.e., HfO₂-basedmaterial 302/dielectric capping layer 402/metal layer 502/(second)capping layer 902/second metal layer 904) used to form the logic FET104. According to an exemplary embodiment, the stack is next patternedinto at least one individual logic FET 104. Thus, as shown in FIG. 10 apatterned hardmask 1002 (e.g., SiN) is formed on the second metal layer904 marking the footprint and location of the at least one logic FET 104in the Active area II.

An etch with the hardmask 1002 is then used to pattern the stack intothe at least one individual logic FET 104 in the Active area II havinggate dielectric 130 (formed from HfO₂-based material 302) disposed onthe substrate 106, (optional) dielectric capping layer 132 (formed fromdielectric capping layer 402) disposed on the gate dielectric 130, gatemetal layer 134 (formed from (first) metal layer 502) disposed ondielectric capping layer 132, (optional) gate capping layer 136 (formedfrom (second) capping layer 902) disposed on the gate metal layer 134and (optional) second gate metal layer 138 (formed from second metallayer 904) disposed on the gate capping layer 136. See FIG. 11. Ananisotropic etching process such as RIE can be employed to etch thestack.

Following completion of the logic FET 104 stack, any remaining hardmask1002 is removed, as is the block mask 802. See FIG. 12. As shown in FIG.12, an anneal is then performed. This anneal serves multiple purposes.First, regarding the FeFET 102 the anneal is used to crystallize theferroelectric material 120 in the ferroelectric phase which is necessaryfor the FeFET 102 to function as an analog device. Second, when present,the anneal may diffuse elements from the capping layers (i.e.,dielectric capping layer 132 and/or gate capping layer 136) into thegate dielectric 130, gate metal layer 134 and/or second gate metal layer138 to tune the Vt of the logic FET. Third, the anneal activates dopants(such as the dopants within the substrate 106—see above). According toan exemplary embodiment, the anneal is performed at a temperature offrom about 800° C. to about 1200° C., and ranges therebetween, e.g.,from about 1000° C. to about 1200° C., and ranges therebetween.Advantageously, the HfO₂-based materials provided above for use as theferroelectric material 120 in FeFET 102 will crystallize and remainstable in the ferroelectric phase at these temperatures. Optionally, inorder to enhance device reliability, the gate dielectric 130 of thelogic FET can be kept thin enough (less than about 20 angstroms (Å)) sothat is does not crystallize and/or can be formed from aseparate/different HfO₂-based material which crystallizes at a differenttemperature.

In the immediately preceding example, a common HfO₂-based layer is beingused in both the FeFET and the logic FET. However, it may be preferableto be able to tune the HfO₂-based material separately for each type ofFET (FeFET or logic FET). For instance, the FeFET might have a differentHfO₂-based material from the logic FET and/or a thickness of theHfO₂-based material might be different in the FeFET than in the logicFET, etc. In that regard, an alternative exemplary methodology forforming (synaptic) FeFETs in the CMOS front-end is now described by wayof reference to FIGS. 13-19.

As above, the example given in this process flow will involveco-fabricating at least one FeFET (i.e., FeFET 102 a to differentiate itfrom FeFET 102 above) along with at least one logic FET (i.e., logic FET104 a to differentiate it from logic FET 104 above) on the samesubstrate. While the formation of a single FeFET 102 a on the substratealongside a single logic FET 104 a will be described, this is being donemerely for ease and clarity of depiction and the same process can beemployed in the same manner described to fabricate multiple FET devicesof either type (i.e., FeFET or logic FET). Further, in the depiction ofthe process flow a number of the above-described steps may beconsolidated into a single figure.

As above, the process begins with substrate 1306. See FIG. 13. Suitablesubstrates 1306 include, but are not limited to, a bulk semiconductor,e.g., Si, Ge, and/or SiGe wafer, and a SOI wafer. Substrate 1306 isdoped with an n-type or p-type dopant. Suitable n-type dopants include,but are not limited to, phosphorous (P) and/or arsenic (As). Suitablep-type dopants include, but are not limited to, boron (B).

STI region 1308 is used to define at least two active areas (e.g.,Active area I and Active area II) in the substrate 1306. Forillustrative purposes only, in the present example an FeFET 102 a willbe formed in the Active area I and a logic FET 104 a will be formed inthe Active area II.

Further, as above, one or more of the steps used to form FeFET 102 a andlogic FET 104 a are preferably performed concurrently. In that case, thecorresponding structures will have the same composition in both the (Feand logic) FETs. However, in contrast to the example above, theHfO₂-based material will be deposited for the ferroelectric material ofthe FeFET 102 a separate from the HfO₂-based material for the gatedielectric of the logic FET 104 a.

For instance, as shown in FIG. 13, a block mask 1310 is first formedcovering the Active area II (for the logic FET 104 a), and a (first)HfO₂-based material 1312 is deposited onto the substrate 1306 in theFeFET (Active area I). HfO₂-based material 1312 can be deposited using aprocess such as ALD or sputtering. As provided above, suitable materialsfor block mask 1310 include, but are not limited to, oxide maskingmaterials such as SiO₂ and nitride masking materials such as SiN. TheHfO₂-based material 1312 will serve as the basis for forming theferroelectric material (i.e., ferroelectric material 120 a todifferentiate it from the ferroelectric material 120 above). As providedabove, suitable HfO₂-based materials include, but are not limited to,pure HfO₂, Hf_(˜0.5)Zr_(˜0.5)O₂, and/or HfO₂ doped with small quantitiesof N, C, Si, Al, La, Gd, Y, Sc, and/or Sr.

Separately depositing the HfO₂-based material in the FeFET (Active areaI) and then subsequently in the logic FET (Active area II) permits theuse of different HfO₂-based material and/or differently configuredHfO₂-based materials such as HfO₂-based materials having differentthicknesses. In this particular example, HfO₂-based material 1312 isdeposited in the FeFET (Active area I) to a thickness T1.

The block mask is then removed from the logic FET (Active area II) andthe same process is then applied to selectively deposit a (second)HfO₂-based material 1404 in the logic FET (Active area II) via a blockmask 1402 covering the FeFET (Active area I). The HfO₂-based material1404 will serve as the basis for forming the gate dielectric (i.e., gatedielectric 130 a to differentiate it from the ferroelectric material 130above). In this particular example, HfO₂-based material 1404 isdeposited in the logic FET (Active area II) to a thickness T2. Accordingto an exemplary embodiment, T1>T2. As provided above, employing athinner HfO₂-based material as the gate dielectric can advantageouslyprevent crystallization in the logic FET.

According to an exemplary embodiment, the HfO₂-based material 1404 isformed from a different HfO₂-based material from HfO₂-based material1312, i.e., a different HfO₂-based material selected from: pure HfO₂,Hf_(˜0.5)Zr_(˜0.5)O₂, and/or HfO₂ doped with small quantities of N, C,Si, Al, La, Gd, Y, Sc, and/or Sr. As provided above, employing adifferent HfO₂-based material as the gate dielectric with a differentcrystallization temperature can advantageously prevent crystallizationin the logic FET.

The block mask 1402 is then removed, and the process proceeds ingenerally the same manner as above. Namely, as shown in FIG. 15 adielectric capping layer 1502 is next optionally deposited onto theHfO₂-based material 1312 in the FeFET (Active area I) and onto theHfO₂-based material 1404 in the logic FET (Active area II) regions. Thisdielectric capping layer 1502 will serve as the basis for forming thedielectric capping layer 122 of the FeFET 102 a and the dielectriccapping layer 132 of the logic FET 104 a. As provided above, suitablematerials for the dielectric capping layer include, but are not limitedto, La₂O₃ and/or Al₂O₃. The dielectric capping layer 1502 can bedeposited using a process such as ALD or CVD.

A metal layer 1504 is deposited onto the dielectric capping layer 1502(or directly onto the first/second HfO₂-based material 1312/1404 if thedielectric capping layer 1502 is not present) in both the FeFET (Activearea I) and the logic FET (Active area II) regions. This metal layer1504 will serve as the basis for forming the electrode 124 of the FeFET102 a and the gate metal layer 134 of the logic FET 104 a. As providedabove, suitable electrode/gate metals include, but are not limited to,TiN and/or TaN. The metal layer 1504 can be deposited using a processsuch as evaporation or electrochemical plating.

This completes the stack (i.e., HfO₂-based material 1312/dielectriccapping layer 1502/metal layer 1504) used to form the FeFET 102 a.According to an exemplary embodiment, the stack is next patterned intoat least one individual FeFET 102 a. For instance, as shown in FIG. 16 apatterned hardmask 1602 (e.g., SiN) is formed on the metal layer 1504marking the footprint and location of the at least one FeFET 102 a inthe Active area I.

An etch with the hardmask 1602 is then used to pattern the stack intothe at least one individual FeFET 102 a in the Active area I havingferroelectric material 120 a (formed from HfO₂-based material 1312)disposed on the substrate 1306, (optional) dielectric capping layer 122(formed from dielectric capping layer 1502) disposed on theferroelectric material 120 a, and electrode 124 (formed from metal layer1504) disposed on the dielectric capping layer 122. See FIG. 16. Ananisotropic etching process such as RIE can be employed to etch thestack. The HfO₂-based material 1404/dielectric capping layer 1502/metallayer 1504 remain in the stack in the Active area II. See FIG. 16.

As described above, the placement of the gate capping layer 136 and thesecond gate metal layer 138 in the logic FET is optional. Thus,according to an alternative embodiment where these optional layers arenot employed, the logic FET stack is also considered complete at thisstage in the process, and both FET devices (FeFET and logic FET) arepatterned concurrently.

However, to enable further processing of the logic FET vis-à-vis theFeFET, following patterning of the FeFET 102 a the hardmask 1602 isremoved and a block mask 1702 is formed covering the (patterned) FeFET102 a in the Active area I. See FIG. 17. Suitable materials for blockmask 1702 include, but are not limited to, oxide masking materials suchas SiO₂ and nitride masking materials such as SiN.

A second/additional dielectric capping layer 1704 is deposited onto themetal layer 1504, and a second/additional metal layer 1706 (whereinmetal layer 1504 may, in this case, also be referred to herein as afirst metal layer) is deposited onto the capping layer 1704. Further, inorder to distinguish dielectric capping layer 1704 from dielectriccapping layer 1502, dielectric capping layer 1502 may also be referredto herein as a first dielectric capping layer. As above, suitablematerials for (second) capping layer 1704 include, but are not limitedto, La₂O₃ and/or aluminum Al₂O₃. Suitable metals for use in second metallayer 1706 include, but are not limited to, TiN and/or TaN. The (second)capping layer 1704 can be deposited using a process such as ALD or CVD,and the second metal layer 1706 can be deposited using a process such asevaporation or electrochemical plating.

In the present example, this completes the stack (i.e., HfO₂-basedmaterial 1404/dielectric capping layer 1502/metal layer 1504/(second)capping layer 1704/second metal layer 1706) used to form the logic FET104 a. According to an exemplary embodiment, the stack is next patternedinto at least one individual logic FET 104 a. To do so, a patternedhardmask 1708 (e.g., SiN) is formed on the second metal layer 1706marking the footprint and location of the at least one logic FET 104 ain the Active area II.

An etch with the hardmask 1708 is then used to pattern the stack intothe at least one individual logic FET 104 a in the Active area II havinggate dielectric 130 a (formed from HfO₂-based material 1404) disposed onthe substrate 1306, (optional) dielectric capping layer 132 (formed fromdielectric capping layer 1502) disposed on the gate dielectric 130 a,gate metal layer 134 (formed from (first) metal layer 1504) disposed ondielectric capping layer 132, (optional) gate capping layer 136 (formedfrom (second) capping layer 1704) disposed on the gate metal layer 134and (optional) second gate metal layer 138 (formed from second metallayer 1706) disposed on the gate capping layer 136. See FIG. 18. Ananisotropic etching process such as RIE can be employed to etch thestack.

Following completion of the logic FET 104 a stack, any remaininghardmask 1708 is removed, as is the block mask 1702. See FIG. 19. Asshown in FIG. 19, an anneal is then performed. This anneal servesmultiple purposes. First, regarding the FeFET 102 a the anneal is usedto crystallize the ferroelectric material 120 a in the ferroelectricphase which is necessary for the FeFET 102 a to function as an analogdevice. Second, when present, the anneal may diffuse elements from thecapping layers (i.e., dielectric capping layer 132 and/or gate cappinglayer 136) into the gate dielectric 130 a, gate metal layer 134 and/orsecond gate metal layer 138 to tune the Vt of the logic FET. Third, theanneal activates dopants (such as the dopants within the substrate1306—see above). According to an exemplary embodiment, the anneal isperformed at a temperature of from about 800° C. to about 1200° C., andranges therebetween, e.g., from about 1000° C. to about 1200° C., andranges therebetween. Advantageously, the HfO₂-based materials providedabove for use as the ferroelectric material 120 a in FeFET 102 a willcrystallize and remain stable in the ferroelectric phase at thesetemperatures.

It is to be understood that the above-described FET deviceconfigurations and corresponding process flows are merely examples ofhow the present FeFET device designs can be implemented in the CMOSFEOL. Importantly, what the above embodiments illustrate is how theFeFET device structure and fabrication process can be easily andeffectively integrated with the CMOS FEOL logic FET flow, includingco-fabrication approaches where common HfO₂-based materials and otherstructures are used in both device types.

Although illustrative embodiments of the present invention have beendescribed herein, it is to be understood that the invention is notlimited to those precise embodiments, and that various other changes andmodifications may be made by one skilled in the art without departingfrom the scope of the invention.

What is claimed is:
 1. A method of forming a field-effect transistor(FET) device, the method comprising the steps of: forming a shallowtrench isolation (STI) region in a substrate separating a first activearea of the substrate from a second active area of the substrate;forming at least one ferroelectric FET (FeFET) on the substrate in thefirst active area having a ferroelectric material comprising a firsthafnium oxide (HfO₂)-based material; and forming at least one logic FETalongside the at least one FeFET on the substrate in the second activearea, wherein the at least one logic FET has a gate dielectriccomprising a second HfO₂-based material.
 2. The method of claim 1,wherein the substrate is doped with an n-type or p-type dopant.
 3. Themethod of claim 1, wherein the ferroelectric material comprising thefirst HfO₂-based material has a thickness T1, wherein the gatedielectric comprising the second HfO₂-based material has a thickness T2,and wherein T1>T2.
 4. The method of claim 1, wherein the firstHfO₂-based material comprises a first material selected from the groupconsisting of: pure HfO₂, Hf_(˜0.5)Zr_(˜0.5)O₂, doped HfO₂, andcombinations thereof, and wherein the second HfO₂-based materialcomprises a second different material selected from the group consistingof: pure HfO₂, Hf_(˜0.5)Zr_(˜0.5)O₂, doped HfO₂, and combinationsthereof.
 5. The method of claim 4, wherein the doped HfO₂ comprises adopant selected from the group consisting of: nitrogen (N), carbon (C),silicon (Si), aluminum (Al), lanthanum (La), gadolinium (Gd), yttrium(Y), scandium (Sc), strontium (Sr), and combinations thereof, andcombinations thereof.
 6. The method of claim 1, further comprising thesteps of: depositing a dielectric capping layer on the first HfO₂-basedmaterial the first active area and on the second HfO₂-based material inthe second active area; depositing a metal layer onto the dielectriccapping layer in both the first active area and the second active area;patterning the HfO₂-based material, dielectric capping layer and themetal layer into the at least one FeFET on the substrate in the firstactive area; and annealing both the at least one FeFET and the at leastone logic FET.
 7. The method of claim 6, wherein the dielectric cappinglayer comprises a material selected from the group consisting of:lanthanum oxide (La₂O₃), aluminum oxide (Al₂O₃), and combinationsthereof.
 8. The method of claim 6, wherein the metal layer comprises amaterial selected from the group consisting of: titanium nitride (TiN),tantalum nitride (TaN), and combinations thereof.
 9. The method of claim6, further comprising the steps of: covering the at least one FeFET witha mask; depositing an additional dielectric capping layer onto the metallayer in the second active area; depositing an additional metal layeronto the additional dielectric capping layer in the second active area;and patterning the HfO₂-based material, dielectric capping layer, themetal layer, the additional dielectric capping layer and the additionalmetal layer into the at least one logic FET on the substrate in thesecond active area.
 10. The method of claim 9, wherein the additionaldielectric capping layer comprises a material selected from the groupconsisting of: La₂O₃, Al₂O₃ and combinations thereof.
 11. The method ofclaim 9, wherein the additional metal layer comprises a metal selectedfrom the group consisting of: TiN, TaN, and combinations thereof. 12.The method of claim 6, wherein the at least one FeFET and the at leastone logic FET are annealed at a temperature of from about 800° C. toabout 1200° C., and ranges therebetween.
 13. The method of claim 6,wherein the at least one FeFET and the at least one logic FET areannealed at a temperature of from about 1000° C. to about 1200° C., andranges therebetween.
 14. A method of forming a FET device, the methodcomprising the steps of: forming a STI region in a substrate separatinga first active area of the substrate from a second active area of thesubstrate; forming at least one FeFET on the substrate in the firstactive area having a ferroelectric material comprising a firstHfO₂-based material; and forming at least one logic FET alongside the atleast one FeFET on the substrate in the second active area, wherein theat least one logic FET has a gate dielectric comprising a secondHfO₂-based material, wherein the ferroelectric material comprising thefirst HfO₂-based material has a thickness T1, wherein the gatedielectric comprising the second HfO₂-based material has a thickness T2,and wherein T1>T2.
 15. The method of claim 14, wherein the firstHfO₂-based material comprises a first material selected from the groupconsisting of: pure HfO₂, Hf_(˜0.5)Zr_(˜0.5)O₂, doped HfO₂, andcombinations thereof, and wherein the second HfO₂-based materialcomprises a second different material selected from the group consistingof: pure HfO₂, Hf_(˜0.5)Zr_(˜0.5)O₂, doped HfO₂, and combinationsthereof.
 16. The method of claim 15, wherein the doped HfO₂ comprises adopant selected from the group consisting of: nitrogen (N), carbon (C),silicon (Si), aluminum (Al), lanthanum (La), gadolinium (Gd), yttrium(Y), scandium (Sc), strontium (Sr), and combinations thereof, andcombinations thereof.
 17. The method of claim 14, further comprising thesteps of: depositing a dielectric capping layer on the first HfO₂-basedmaterial the first active area and on the second HfO₂-based material inthe second active area; depositing a metal layer onto the dielectriccapping layer in both the first active area and the second active area;patterning the HfO₂-based material, dielectric capping layer and themetal layer into the at least one FeFET on the substrate in the firstactive area; and annealing both the at least one FeFET and the at leastone logic FET.
 18. The method of claim 17, wherein the dielectriccapping layer comprises a material selected from the group consistingof: La₂O₃, Al₂O₃, and combinations thereof.
 19. The method of claim 17,wherein the metal layer comprises a material selected from the groupconsisting of: TiN, TaN, and combinations thereof.
 20. The method ofclaim 17, further comprising the steps of: covering the at least oneFeFET with a mask; depositing an additional dielectric capping layeronto the metal layer in the second active area; depositing an additionalmetal layer onto the additional dielectric capping layer in the secondactive area; and patterning the HfO₂-based material, dielectric cappinglayer, the metal layer, the additional dielectric capping layer and theadditional metal layer into the at least one logic FET on the substratein the second active area.